IRF7458
510 руб.
от 2 шт. —
410 руб.
от 5 шт. —
337 руб.
от 10 шт. —
309.96 руб.
Добавить в корзину 1 шт.
на сумму 510 руб.
Описание
Электроэлемент
MOSFET, N-CH, 30V, 14A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0063ohm; Rds(on) Test Voltage Vgs:16V; Threshold Voltage Vgs:4V; Power D
Технические параметры
| Brand | Infineon/IR |
| Channel Mode | Enhancement |
| Configuration | Single Quad Drain Triple Source |
| Factory Pack Quantity | 95 |
| Fall Time | 5 ns |
| Forward Transconductance - Min | 26 S |
| Height | 1.75 mm |
| Id - Continuous Drain Current | 14 A |
| Length | 4.9 mm |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SO-8 |
| Packaging | Tube |
| Pd - Power Dissipation | 2.5 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 39 nC |
| Rds On - Drain-Source Resistance | 7 mOhms |
| Rise Time | 4.6 ns |
| RoHS | Details |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | Smps MOSFET |
| Typical Turn-Off Delay Time | 22 ns |
| Typical Turn-On Delay Time | 10 ns |
| Unit Weight | 0.01787 oz |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Vgs - Gate-Source Voltage | 30 V |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Width | 3.9 mm |
| Вес, г | 1.18 |
Техническая документация
Документация
pdf, 120 КБ
