STL8P4LLF6
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6 шт. со склада г.Москва, срок 10-11 дней
470 руб.
от 2 шт. —
370 руб.
от 5 шт. —
295 руб.
Добавить в корзину 1 шт.
на сумму 470 руб.
Альтернативные предложения2
Описание
Электроэлемент
MOSFET, P-CH, -40V, -8A, 2.9W, POWERFLAT; Transistor Polarity:P Channel; Continuous Drain Current Id:-8A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.0175ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage V
Технические параметры
| Brand | STMicroelectronics |
| Channel Mode | Enhancement |
| Factory Pack Quantity | 3000 |
| Fall Time | 19 ns |
| Height | 0.9 mm |
| Id - Continuous Drain Current | -8 A |
| Length | 3.5 mm |
| Manufacturer | STMicroelectronics |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | PowerFLAT-3.3x3.3-8 |
| Packaging | Reel |
| Pd - Power Dissipation | 2.9 W |
| Product | Power MOSFET |
| Product Category | MOSFET |
| Qg - Gate Charge | 22 nC |
| Rds On - Drain-Source Resistance | 20.5 mOhms |
| Rise Time | 47 ns |
| RoHS | Details |
| Series | P-channel STripFET |
| Technology | Si |
| Transistor Polarity | P-Channel |
| Transistor Type | 1 P-Channel |
| Type | STripFET F6 |
| Typical Turn-Off Delay Time | 148 ns |
| Typical Turn-On Delay Time | 43 ns |
| Vds - Drain-Source Breakdown Voltage | -40 V |
| Vgs - Gate-Source Voltage | +/-20 V |
| Vgs th - Gate-Source Threshold Voltage | 1 V to 2.5 V |
| Width | 3.5 mm |
| Automotive | No |
| Channel Type | P |
| Configuration | Single Quad Drain Triple Source |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | No Lead |
| Maximum Continuous Drain Current (A) | 8 |
| Maximum Drain Source Resistance (mOhm) | 20.5@10V |
| Maximum Drain Source Voltage (V) | 40 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Maximum IDSS (uA) | 1 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 2900 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Part Status | Active |
| PCB changed | 8 |
| Pin Count | 8 |
| PPAP | No |
| Process Technology | STripFET F6 |
| Supplier Package | Power Flat EP |
| Supplier Temperature Grade | Industrial |
| Typical Fall Time (ns) | 19 |
| Typical Gate Charge @ Vgs (nC) | 22@4.5V |
| Typical Input Capacitance @ Vds (pF) | 2850@25V |
| Typical Rise Time (ns) | 47 |
| Typical Turn-Off Delay Time (ns) | 148 |
| Typical Turn-On Delay Time (ns) | 43 |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 19 ns |
| Id - Continuous Drain Current: | 8 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | PowerFLAT-3.3x3.3-8 |
| Pd - Power Dissipation: | 2.9 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | Power MOSFETs |
| Qg - Gate Charge: | 22 nC |
| Rds On - Drain-Source Resistance: | 20.5 mOhms |
| Rise Time: | 47 ns |
| Series: | STL8P4LLF6 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | STripFET |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Type: | STripFET F6 |
| Typical Turn-Off Delay Time: | 148 ns |
| Typical Turn-On Delay Time: | 43 ns |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Continuous Drain Current (Id) | - |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 20.5mΩ@10V, 4A |
| Drain Source Voltage (Vdss) | 40V |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
| Power Dissipation (Pd) | 2.9W |
| Вес, г | 0.35 |
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