IRFH5015TRPBF
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см. техническую документацию
см. техническую документацию
180 руб.
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на сумму 360 руб.
Описание
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge.
Технические параметры
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 4000 |
| Fall Time: | 3.4 ns |
| Forward Transconductance - Min: | 38 S |
| Id - Continuous Drain Current: | 10 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | PQFN-8 |
| Part # Aliases: | IRFH5015TRPBF SP001575670 |
| Pd - Power Dissipation: | 3.6 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 36 nC |
| Rds On - Drain-Source Resistance: | 31 mOhms |
| Rise Time: | 9.7 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 14 ns |
| Typical Turn-On Delay Time: | 9.4 ns |
| Vds - Drain-Source Breakdown Voltage: | 150 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 5 V |
| Channel Mode | Enhancement |
| Channel Type | N |
| Forward Diode Voltage | 1.3V |
| Maximum Continuous Drain Current | 44 A |
| Maximum Drain Source Resistance | 31 mΩ |
| Maximum Drain Source Voltage | 150 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 156 W |
| Minimum Gate Threshold Voltage | 3V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | PQFN 5x6 |
| Pin Count | 8 |
| Series | HEXFET |
| Typical Gate Charge @ Vgs | 36 nC @ 10 V |
| Width | 5mm |
| Вес, кг | 4.33 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
