AUIRF7343QTR, Dual N/P-Channel-Channel MOSFET, 4 A, 55 V, 8-Pin SOIC AUIRF7343QTR
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Описание
Semiconductors\Discrete Semiconductors\MOSFETs
The Infineon AUIRF7343QTR specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.
Технические параметры
| Channel Type | N, P |
| Maximum Continuous Drain Current | 4 A |
| Maximum Drain Source Voltage | 55 V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 2 |
| Package Type | SOIC |
| Pin Count | 8 |
| Automotive | Yes |
| Channel Mode | Enhancement |
| Configuration | Dual Dual Drain |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Gull-wing |
| Material | Si |
| Maximum Continuous Drain Current (A) | 4.7@N Channel|3.4@P Channel |
| Maximum Drain Source Resistance (mOhm) | 50@10V@N Channel|105@10V@P Channel |
| Maximum Drain Source Voltage (V) | 55 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 2000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Packaging | Tape and Reel |
| Part Status | Obsolete |
| PCB changed | 8 |
| PPAP | Unknown |
| Process Technology | HEXFET |
| Product Category | Power MOSFET |
| Standard Package Name | SO |
| Supplier Package | SOIC |
| Supplier Temperature Grade | Automotive |
| Typical Fall Time (ns) | 13@N Channel|22@P Channel |
| Typical Gate Charge @ 10V (nC) | 24@N Channel|26@P Channel |
| Typical Gate Charge @ Vgs (nC) | 24@10V@N Channel|26@10V@P Channel |
| Typical Input Capacitance @ Vds (pF) | 740@10V@N Channel|690@10V@P Channel |
| Typical Rise Time (ns) | 3.2@N Channel|10@P Channel |
| Typical Turn-Off Delay Time (ns) | 32@N Channel|43@P Channel |
| Typical Turn-On Delay Time (ns) | 8.3@N Channel|14@P Channel |
| Continuous Drain Current (Id) | 4.7A;3.4A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 50mΩ@4.7A, 10V |
| Drain Source Voltage (Vdss) | 55V |
| Gate Threshold Voltage (Vgs(th)@Id) | 1V@250uA |
| Input Capacitance (Ciss@Vds) | 740pF@25V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Power Dissipation (Pd) | 2W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Total Gate Charge (Qg@Vgs) | 36nC@10V |
| Type | NChannel+PChannel |
| Вес, г | 1 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
