SiHG47N60E
3 280 руб.
от 2 шт. —
3 080 руб.
от 5 шт. —
2 940 руб.
от 10 шт. —
2 792.10 руб.
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на сумму 3 280 руб.
Описание
Электроэлемент
MOSFET, N CHANNEL, 600V, 29A, TO-247AC, Transistor Polarity:N Channel, Continuous Drain Current Id:47A, Drain Source Voltage Vds:600V, On Resistance Rds(on):0.053ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.5V , RoHS Compliant: Yes
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 47A(Tc) |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 220nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 9620pF @ 100V |
| Manufacturer | Vishay Siliconix |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | TO-247-3 |
| Packaging | Tube |
| Part Status | Not For New Designs |
| Power Dissipation (Max) | 357W(Tc) |
| Rds On (Max) @ Id, Vgs | 64mOhm @ 24A, 10V |
| Series | - |
| Supplier Device Package | TO-247AC |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±30V |
| Vgs(th) (Max) @ Id | 4V @ 250ВµA |
| Вес, г | 6.43 |
