STF13N80K5, Транзистор: N-MOSFET, SuperMESH5™, полевой, 800В, 7,6А, 35Вт
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Описание
Semiconductors\Transistors\Unipolar transistors\N channel transistors
Описание Транзистор: N-MOSFET, SuperMESH5™, полевой, 800В, 7,6А, 35Вт Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Case | TO220FP |
| Drain current | 7.6A |
| Drain-source voltage | 800V |
| Features of semiconductor devices | ESD protected gate |
| Gate-source voltage | ±30V |
| Kind of channel | enhanced |
| Kind of package | tube |
| Manufacturer | STMicroelectronics |
| Mounting | THT |
| On-state resistance | 0.45Ω |
| Polarisation | unipolar |
| Power dissipation | 35W |
| Technology | SuperMESH5™ |
| Type of transistor | N-MOSFET |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Fall Time: | 16 ns |
| Id - Continuous Drain Current: | 12 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-220-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 35 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 29 nC |
| Rds On - Drain-Source Resistance: | 370 mOhms |
| Rise Time: | 16 ns |
| Series: | STF13N80K5 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | MDmesh |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 42 ns |
| Typical Turn-On Delay Time: | 16 ns |
| Vds - Drain-Source Breakdown Voltage: | 800 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Вес, г | 1.7 |
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