SPB20N60C3, Транзистор N-МОП, полевой, 650В, 20,7А, 208Вт, PG-TO263

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Номенклатурный номер: 8002566040

Артикул: SPB20N60C3

Semiconductors\Transistors\Unipolar transistors\N channel transistors

20.7 A, 600 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB

Case	PG-TO263-3
Drain current	20.7A
Drain-source voltage	650V
Gate-source voltage	±20V
Kind of channel	enhanced
Manufacturer	INFINEON TECHNOLOGIES
Mounting	SMD
On-state resistance	0.19Ω
Polarisation	unipolar
Power dissipation	208W
Technology	CoolMOS™
Type of transistor	N-MOSFET
Brand	Infineon Technologies
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	1000
Fall Time	4.5 ns
Height	4.4 mm
Id - Continuous Drain Current	20.7 A
Length	10 mm
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	TO-263-3
Packaging	Reel
Part # Aliases	SP000013520 SPB20N60C3ATMA1 SPB20N60C3XT
Pd - Power Dissipation	208 W
Product Category	MOSFET
Rds On - Drain-Source Resistance	190 mOhms
Rise Time	5 ns
RoHS	Details
Series	CoolMOS C3
Tradename	CoolMOS
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	67 ns
Typical Turn-On Delay Time	10 ns
Unit Weight	0.139332 oz
Vds - Drain-Source Breakdown Voltage	600 V
Vgs - Gate-Source Voltage	30 V
Width	9.25 mm
Вес, г	1.63

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