TK9J90E.S1E
1 шт. со склада г.Москва, срок 6-9 дней
900 руб.
Добавить в корзину 1 шт.
на сумму 900 руб.
Альтернативные предложения2
Описание
Электроэлемент
Trans MOSFET N-CH 900V 9A 3-Pin TO-3P(N) - Rail/Tube (Alt: TK9J90E,S1E)
Технические параметры
| Brand | Toshiba |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 25 |
| Fall Time | 35 ns |
| Height | 20 mm |
| Id - Continuous Drain Current | 9 A |
| Length | 15.5 mm |
| Manufacturer | Toshiba |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-3PN-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 250 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 46 nC |
| Rds On - Drain-Source Resistance | 1 Ohms |
| Rise Time | 40 ns |
| RoHS | Details |
| Series | TK9J90E |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 140 ns |
| Typical Turn-On Delay Time | 80 ns |
| Unit Weight | 0.245577 oz |
| Vds - Drain-Source Breakdown Voltage | 900 V |
| Vgs - Gate-Source Voltage | 30 V |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Width | 4.5 mm |
| Continuous Drain Current (Id) | 9A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 1.3Ω@4.5A, 10V |
| Drain Source Voltage (Vdss) | 900V |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@900uA |
| Input Capacitance (Ciss@Vds) | 2nF@25V |
| Power Dissipation (Pd) | 250W |
| Total Gate Charge (Qg@Vgs) | 46nC@10V |
| Type | 1PCSNChannel |
| Вес, г | 6.42 |
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