BCP56-16G
120 руб.
Мин. кол-во для заказа 2 шт.
от 5 шт. —
59 руб.
от 10 шт. —
40 руб.
от 100 шт. —
23.44 руб.
Добавить в корзину 2 шт.
на сумму 240 руб.
Описание
Электроэлемент
TRANSISTOR, BIPOL, NPN, 80V, SOT-223-4; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:130MHz; Power Dissipation Pd:1.5W; DC Collector Current:1A; DC Current Gain hFE:25hFE; Tran
Технические параметры
| Brand | ON Semiconductor |
| Collector- Base Voltage VCBO | 100 V |
| Collector- Emitter Voltage VCEO Max | 80 V |
| Collector-Emitter Saturation Voltage | 0.5 V |
| Configuration | Single |
| Continuous Collector Current | 1 A |
| DC Collector/Base Gain hfe Min | 25 |
| Emitter- Base Voltage VEBO | 5 V |
| Factory Pack Quantity | 1000 |
| Gain Bandwidth Product fT | 130 MHz |
| Height | 1.57 mm |
| Length | 6.5 mm |
| Manufacturer | ON Semiconductor |
| Maximum DC Collector Current | 1 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -65 C |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-223-4 |
| Packaging | Reel |
| Pd - Power Dissipation | 1.5 W |
| Product Category | Bipolar Transistors-BJT |
| RoHS | Details |
| Series | BCP56 |
| Transistor Polarity | NPN |
| Unit Weight | 0.003951 oz |
| Width | 3.5 mm |
| Вес, г | 0.22 |
Техническая документация
Datasheet SBCP56-10T1G
pdf, 69 КБ
