MMBT2222AWG
90 руб.
Мин. кол-во для заказа 2 шт.
от 5 шт. —
39 руб.
от 10 шт. —
21 руб.
от 100 шт. —
9.59 руб.
Добавить в корзину 2 шт.
на сумму 180 руб.
Описание
Электроэлемент
TRANSISTOR, NPN, 40V, 600MA, SOT-323-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:150mW; DC Collector Current:600mA; DC Current Gain hFE:35hFE; Transistor Case Style:SOT-323; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-55°C
Технические параметры
| Brand | ON Semiconductor |
| Collector- Base Voltage VCBO | 75 V |
| Collector- Emitter Voltage VCEO Max | 40 V |
| Collector-Emitter Saturation Voltage | 1 V |
| Configuration | Single |
| Continuous Collector Current | 0.6 A |
| DC Collector/Base Gain hfe Min | 35 |
| Emitter- Base Voltage VEBO | 6 V |
| Factory Pack Quantity | 3000 |
| Gain Bandwidth Product fT | 300 MHz |
| Height | 0.85 mm |
| Length | 2.1 mm |
| Manufacturer | ON Semiconductor |
| Maximum DC Collector Current | 0.6 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Package / Case | SC-70-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 150 mW |
| Product Category | Bipolar Transistors-BJT |
| RoHS | Details |
| Series | MMBT2222AW |
| Transistor Polarity | NPN |
| Unit Weight | 0.000219 oz |
| Width | 1.24 mm |
Техническая документация
Datasheet MMBT2222AWT1G
pdf, 121 КБ
