NTR1P02LG
120 руб.
Мин. кол-во для заказа 2 шт.
от 5 шт. —
66 руб.
от 10 шт. —
48 руб.
от 100 шт. —
31.88 руб.
Добавить в корзину 2 шт.
на сумму 240 руб.
Описание
Электроэлемент
MOSFET, P CHANNEL, -20V, -1.3A, SOT-23-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-1.3A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.14ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage
Технические параметры
| Channel Mode | Enhancement |
| Continuous Drain Current | 1.3(A) |
| Drain Current (Max) | 1.3 A |
| Drain Efficiency | Not Required% |
| Drain-Source On-Res | 0.22(ohm) |
| Drain-Source On-Volt | 20(V) |
| Frequency (Max) | Not Required MHz |
| Gate-Source Voltage (Max) | '±12(V) |
| Mounting | Surface Mount |
| Noise Figure | Not Required dB |
| Number of Elements | 1 |
| Operating Temp Range | -55C to 150C |
| Operating Temperature Classification | Military |
| Output Power (Max) | Not Required W |
| Package Type | SOT-23 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Polarity | P |
| Power Dissipation | 0.4(W) |
| Power Gain | Not Required dB |
| Rad Hardened | No |
| Type | Power MOSFET |
| Вес, г | 0.0572 |
Техническая документация
Datasheet NVTR01P02LT1G
pdf, 89 КБ
