NTZD3152PG
120 руб.
Мин. кол-во для заказа 2 шт.
от 5 шт. —
66 руб.
от 10 шт. —
48 руб.
от 29 шт. —
35.82 руб.
Добавить в корзину 2 шт.
на сумму 240 руб.
Описание
Электроэлемент
MOSFET, DUAL P-CH, -20V, -430A, SOT-563; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-430mA; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.9ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1V; Power Dissipation Pd:280mW; Transistor Case Style:SOT-563; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
Технические параметры
| Channel Mode | Enhancement |
| Continuous Drain Current | 0.43(A) |
| Drain Current (Max) | 0.43 A |
| Drain Efficiency | Not Required% |
| Drain-Source On-Res | 0.9(ohm) |
| Drain-Source On-Volt | 20(V) |
| Frequency (Max) | Not Required MHz |
| Gate-Source Voltage (Max) | '±6(V) |
| Mounting | Surface Mount |
| Noise Figure | Not Required dB |
| Number of Elements | 2 |
| Operating Temp Range | -55C to 150C |
| Operating Temperature Classification | Military |
| Output Power (Max) | Not Required W |
| Package Type | SOT-563 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Polarity | P |
| Power Dissipation | 280(W) |
| Power Gain | Not Required dB |
| Rad Hardened | No |
| Type | Small Signal |
Техническая документация
Datasheet NTZD3152PT1G
pdf, 65 КБ
