BS170G
140 руб.
Мин. кол-во для заказа 2 шт.
от 5 шт. —
70 руб.
от 10 шт. —
49 руб.
от 100 шт. —
29.99 руб.
Добавить в корзину 2 шт.
на сумму 280 руб.
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Описание
Электроэлемент
BS170-D74Z BS170"D26Z BS170_D26Z BS170-D26Z
Технические параметры
| Brand | ON Semiconductor/Fairchild |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 1000 |
| Forward Transconductance - Min | 0.32 S |
| Height | 5.33 mm |
| Id - Continuous Drain Current | 500 mA |
| Length | 5.2 mm |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-92-3 |
| Packaging | Bulk |
| Part # Aliases | BS170_NL |
| Pd - Power Dissipation | 830 mW |
| Product | MOSFET Small Signal |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 1.2 Ohms |
| RoHS | Details |
| Series | BS170 |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | FET |
| Unit Weight | 0.007055 oz |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Voltage | 20 V |
| Width | 4.19 mm |
| Вес, г | 0.23 |
Техническая документация
Документация
pdf, 903 КБ
