NJVMJD122G
280 руб.
Мин. кол-во для заказа 2 шт.
от 5 шт. —
220 руб.
от 10 шт. —
192 руб.
от 20 шт. —
177.66 руб.
Добавить в корзину 2 шт.
на сумму 560 руб.
Описание
Электроэлемент
100V 1000@4V,4A NPN 4MHz 10uA 8A 1.75W -65°C~+150°C@(Tj) 4V@8A,80mA TO-252 DarlIngton TransIstors
Технические параметры
| Category | Discrete Semiconductor Products |
| Current - Collector (Ic) (Max) | 8A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 4A, 4V |
| Family | Transistors(BJT)-Single |
| Frequency - Transition | - |
| Mounting Type | Surface Mount |
| Other Names | NJVMJD122T4GOSCT |
| Package / Case | TO-252-3, DPak(2 Leads+Tab), SC-63 |
| Packaging | Cut Tape(CT) |
| Power - Max | 1.75W |
| Series | - |
| Standard Package | 1 |
| Supplier Device Package | DPAK-3 |
| Transistor Type | NPN-Darlington |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 8A, 80mA |
| Voltage - Collector Emitter Breakdown (Max) | 100V |
Техническая документация
MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP)
pdf, 100 КБ
