2N7000TA, MOSFET 60V N-Channel Sm Sig
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Описание
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology.
Технические параметры
Base Part Number | 2N7000 |
Current - Continuous Drain (Id) @ 25В°C | 200mA(Tc) |
Drain to Source Voltage (Vdss) | 60V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
FET Feature | - |
FET Type | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V |
Manufacturer | ON Semiconductor |
Mounting Type | Through Hole |
Operating Temperature | -55В°C ~ 150В°C(TJ) |
Package / Case | TO-226-3, TO-92-3(TO-226AA)(Formed Leads) |
Packaging | Tape & Box(TB) |
Part Status | Active |
Power Dissipation (Max) | 400mW(Ta) |
Rds On (Max) @ Id, Vgs | 5Ohm @ 500mA, 10V |
Series | - |
Supplier Device Package | TO-92-3 |
Technology | MOSFET(Metal Oxide) |
Vgs (Max) | В±20V |
Vgs(th) (Max) @ Id | 3V @ 1mA |
Channel Mode | Enhancement |
Channel Type | N |
Maximum Continuous Drain Current | 200 mA |
Maximum Drain Source Resistance | 5 Ω |
Maximum Drain Source Voltage | 60 V |
Maximum Gate Source Voltage | -30 V, +30 V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 400 mW |
Minimum Gate Threshold Voltage | 0.3V |
Minimum Operating Temperature | -55 °C |
Number of Elements per Chip | 1 |
Package Type | TO-92 |
Pin Count | 3 |
Transistor Configuration | Single |
Transistor Material | Si |
Width | 4.19mm |
Вес, г | 0.45 |
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