QPA1003D, RF Amplifier 1-8GHz 10 Watt GaN
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см. техническую документацию
см. техническую документацию
10 шт., срок 7-9 недель
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Описание
Semiconductors\Wireless & RF Integrated Circuits\RF Amplifier
GaN SolutionsQorvo is your smart RF partner for building solutions using Gallium Nitride (GaN) technology. No longer a technology just for defense and aerospace applications, GaN is enabling higher and higher frequencies in more complex applications, such as phased arrays, radar, base transceiver stations for 5G, cable TV (CATV), VSAT, and defense communications. Qorvo provides proven, record-setting GaN circuit reliability and compact, high-efficiency products. This paves the way for more robust performance, lower operating costs and longer operational lifetimes.
Технические параметры
Brand: | Qorvo |
Factory Pack Quantity: Factory Pack Quantity: | 10 |
Gain: | 31 dB |
Input Return Loss: | 14.4 dB |
Manufacturer: | Qorvo |
Maximum Operating Temperature: | +85 C |
Minimum Operating Temperature: | -40 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Operating Frequency: | 1 GHz to 8 GHz |
Operating Supply Current: | 650 mA |
Operating Supply Voltage: | 28 V |
Package / Case: | Die |
Packaging: | Gel Pack |
Pd - Power Dissipation: | 30 W |
Product Category: | RF Amplifier |
Product Type: | RF Amplifier |
Series: | QPA1003D |
Subcategory: | Wireless & RF Integrated Circuits |
Technology: | GaN SiC |
Test Frequency: | 8 GHz |
Type: | Power Amplifiers |
Вес, г | 3.24 |
Техническая документация
Datasheet
pdf, 443 КБ
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