TIP41CG, Bipolar Transistors - BJT 6A 100V 65W NPN
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
350 руб.
от 10 шт. —
250 руб.
от 100 шт. —
186 руб.
от 500 шт. —
150.32 руб.
Добавить в корзину 1 шт.
на сумму 350 руб.
Альтернативные предложения1
Описание
Описание Транзистор NPN, биполярный, 100В, 6А, 65Вт, TO220AB Характеристики
| Категория | Транзистор |
| Тип | биполярный |
| Вид | NPN |
Технические параметры
| Maximum Collector Emitter Saturation Voltage | 1.5 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Operating Frequency | 1 MHz |
| Number of Elements per Chip | 1 |
| Length | 10.28mm |
| Maximum Collector Base Voltage | 100 V |
| Transistor Configuration | Single |
| Brand | ON Semiconductor |
| Maximum Collector Emitter Voltage | 100 V |
| Package Type | TO-220AB |
| Maximum Power Dissipation | 65 W |
| Mounting Type | Through Hole |
| Minimum Operating Temperature | -65 °C |
| Width | 4.82mm |
| Maximum DC Collector Current | 6 A |
| Transistor Type | NPN |
| Height | 15.75mm |
| Pin Count | 3 |
| Dimensions | 10.28 x 4.82 x 15.75mm |
| Maximum Emitter Base Voltage | 5 V |
| Minimum DC Current Gain | 15 |
| Collector- Base Voltage VCBO | 100 V |
| Collector- Emitter Voltage VCEO Max | 100 V |
| Collector-Emitter Saturation Voltage | 1.5 V |
| Configuration | Single |
| Continuous Collector Current | 6 A |
| DC Collector/Base Gain hfe Min | 30 |
| Emitter- Base Voltage VEBO | 5 V |
| Factory Pack Quantity | 50 |
| Gain Bandwidth Product fT | 3 MHz |
| Manufacturer | ON Semiconductor |
| Mounting Style | Through Hole |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Pd - Power Dissipation | 65 W |
| Product Category | Bipolar Transistors-BJT |
| RoHS | Details |
| Series | TIP41 |
| Transistor Polarity | NPN |
| Unit Weight | 0.211644 oz |
| Вес, г | 6 |
Техническая документация
TIP41A, TIP41B, TIP41C
pdf, 213 КБ
TIP41A-D
pdf, 121 КБ
