IRFR9024NTRLPBF
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
87 руб.
Мин. кол-во для заказа 4 шт.
Добавить в корзину 4 шт.
на сумму 348 руб.
Описание
55V 11A 175mΩ@6.6A,10V 38W 4V@250uA P Channel DPAK MOSFETs ROHS
Технические параметры
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 37 ns |
| Forward Transconductance - Min: | 2.5 S |
| Id - Continuous Drain Current: | 11 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-252-3 |
| Part # Aliases: | IRFR9024NTRLPBF SP001557198 |
| Pd - Power Dissipation: | 38 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 19 nC |
| Rds On - Drain-Source Resistance: | 175 mOhms |
| Rise Time: | 55 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 23 ns |
| Typical Turn-On Delay Time: | 13 ns |
| Vds - Drain-Source Breakdown Voltage: | 55 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Continuous Drain Current (Id) | 11A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 175mΩ@6.6A, 10V |
| Drain Source Voltage (Vdss) | 55V |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Input Capacitance (Ciss@Vds) | 350pF@25V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Power Dissipation (Pd) | 38W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Total Gate Charge (Qg@Vgs) | 19nC@10V |
| Type | P Channel |
Техническая документация
Datasheet
pdf, 1384 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
