BD13716STU, Bipolar Transistors - BJT NPN Epitaxial Sil

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250 руб.

от 10 шт. — 200 руб.

от 100 шт. — 136 руб.

от 500 шт. — 102.80 руб.

Добавить в корзину 1 шт. на сумму 250 руб.

Номенклатурный номер: 8004673781

Артикул: BD13716STU

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Описание Транзистор: NPN, биполярный, 60В, 1,5А, 1,25Вт, TO126ISO Характеристики

Brand:	onsemi/Fairchild
Collector- Base Voltage VCBO:	60 V
Collector- Emitter Voltage VCEO Max:	60 V
Collector-Emitter Saturation Voltage:	500 mV
Configuration:	Single
Continuous Collector Current:	1.5 A
DC Collector/Base Gain hfe Min:	40
DC Current Gain hFE Max:	160
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity: Factory Pack Quantity:	1920
Manufacturer:	onsemi
Maximum DC Collector Current:	1.5 A
Maximum Operating Temperature:	+150 C
Mounting Style:	Through Hole
Package / Case:	TO-126-3
Packaging:	Tube
Part # Aliases:	BD13716STU_NL
Pd - Power Dissipation:	12.5 W
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Series:	BD137
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
Maximum Collector Base Voltage	60 V
Maximum Collector Emitter Voltage	60 V
Maximum DC Collector Current	1.5 A
Maximum Emitter Base Voltage	5 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	12.5 W
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	TO-126
Pin Count	3
Transistor Configuration	Single
Transistor Type	NPN
Minimum DC Current Gain	100
Вес, г	0.85

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