ISP25DP06LMSATMA1, MOSFET SMALL SIGNAL MOSFETS
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
P-Channel Power MOSFETsInfineon P-Channel Power MOSFETs offer an option that can simplify circuitry while optimizing performance. The large portfolio of P-Channel power MOSFETs is designed for a wide range of industrial and automotive applications. The main advantage of a P-Channel device is the reduction of design complexity in high- and low-power applications. P-Channel Power MOSFETs are ideally suited for battery protection, reverse polarity protection, linear battery chargers, load switching, DC-DC converters, and low voltage drive applications.
Технические параметры
Brand: | Infineon Technologies |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Fall Time: | 3 ns |
Forward Transconductance - Min: | 4.4 S |
Id - Continuous Drain Current: | 1.9 A |
Manufacturer: | Infineon |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | SOT-223-3 |
Part # Aliases: | ISP25DP06LMS SP004987240 |
Pd - Power Dissipation: | 5 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 13.9 nC |
Rds On - Drain-Source Resistance: | 250 mOhms |
Rise Time: | 6 ns |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | P-Channel |
Transistor Type: | 1 P-Channel |
Typical Turn-Off Delay Time: | 23 ns |
Typical Turn-On Delay Time: | 3 ns |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2 V |
Channel Type | P |
Maximum Continuous Drain Current | 190 mA |
Maximum Drain Source Voltage | 60 V |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | SOT-223 |
Pin Count | 3 |
Вес, г | 0.1158 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов