UJ3D06512TS, Schottky Diodes & Rectifiers 650V/12A,SIC, DIODE,G3,TO220-2
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Описание
Semiconductors\Discrete Semiconductors\Diodes & Rectifiers\Schottky Diodes & Rectifiers
UJ3D 650V/1200V/1700V SiC Schottky DiodesUnitedSiC / Qorvo UJ3D 650V/1200V/1700V SiC Schottky Diodes are designed to take advantage of SiC's superior physical characteristics over standard silicon, with 4 times better dynamic characteristics and 15% less forward voltage (V F ). With zero reverse recovery charge and a high maximum junction temperature of 175°C, these devices are ideally suited for high-frequency and high-efficiency power systems with minimum cooling requirements. These devices feature an optimized forward voltage drop, enhanced surge capability, and ultra-low reverse recovery Q c (Q rr ) and are ideally suited for telecom power, server PSUs, battery chargers, and any application that requires high switching speeds and reduced losses. All devices are qualified according to AEC-Q101 standards and manufactured in a TS 16949-certified supply chain, making them ideal for automotive applications.
Технические параметры
Brand: | Qorvo/UnitedSiC |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 50 |
If - Forward Current: | 12 A |
Ifsm - Forward Surge Current: | 70 A |
Ir - Reverse Current: | 80 uA |
Manufacturer: | Qorvo |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Package / Case: | TO-220-2 |
Packaging: | Tube |
Pd - Power Dissipation: | 187.5 W |
Product Category: | Schottky Diodes & Rectifiers |
Product Type: | Schottky Diodes & Rectifiers |
Product: | Schottky Silicon Carbide Diodes |
Qualification: | AEC-Q101 |
Series: | UJ3D |
Subcategory: | Diodes & Rectifiers |
Technology: | SiC |
Vf - Forward Voltage: | 1.5 V |
Vr - Reverse Voltage: | 650 V |
Vrrm - Repetitive Reverse Voltage: | 650 V |
Техническая документация
Datasheet
pdf, 252 КБ
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