BSS138-13-F, MOSFET BSS Family
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Power MOSFETsDiodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.
Технические параметры
| Brand: | Diodes Incorporated |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 10000 |
| Forward Transconductance - Min: | 100 mS |
| Id - Continuous Drain Current: | 200 mA |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOT-23-3 |
| Pd - Power Dissipation: | 300 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Rds On - Drain-Source Resistance: | 3.5 Ohms |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Typical Turn-Off Delay Time: | 20 ns |
| Typical Turn-On Delay Time: | 20 ns |
| Vds - Drain-Source Breakdown Voltage: | 50 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 500 mV |
| Вес, г | 0.01 |
Техническая документация
Datasheet
pdf, 588 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
