QPA1027, RF Amplifier 2.8-3.5GHz 60W GaN Power Amplifier
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см. техническую документацию
см. техническую документацию
13 шт., срок 7-9 недель
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Описание
Semiconductors\Wireless & RF Integrated Circuits\RF Amplifier
QPA1027 GaN Power Amplifiers Qorvo QPA1027 GaN Power Amplifiers offer 60W of saturated output power and 22dB of large-signal gain while achieving high efficiency. These amplifiers have bias flexibility that helps to vary the voltage to achieve optimum system performance while maintaining high reliability. The QPA1027 power amplifiers are matched to 50Ω with integrated DC blocking caps on both I/O ports. These amplifiers are packaged in a plastic overmould QFN with a Cu paddle, offering easy handling combined with good thermal properties. The QPA1027 high-power, S-band amplifiers are fabricated using Qorvo"s production 0.25 um GaN on SiC High Voltage process (QGaN25HV). Typical applications include S-band radar and satellite communication.
Технические параметры
Brand: | Qorvo |
Development Kit: | QPA1027EVB01 |
Factory Pack Quantity: | 10 |
Gain: | 31 dB |
Input Return Loss: | 15 dB |
Manufacturer: | Qorvo |
Maximum Operating Temperature: | +85 C |
Minimum Operating Temperature: | -40 C |
Moisture Sensitive: | Yes |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Operating Frequency: | 2.8 GHz to 3.5 GHz |
Operating Supply Current: | 300 mA |
Operating Supply Voltage: | 50 V |
Package/Case: | QFN-28 |
Pd - Power Dissipation: | 80 W |
Product Category: | RF Amplifier |
Product Type: | RF Amplifier |
Subcategory: | Wireless & RF Integrated Circuits |
Technology: | GaN SiC |
Type: | Power Amplifiers |
Техническая документация
Datasheet QPA1027EVB01
pdf, 793 КБ
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