QPD1015, RF JFET Transistors DC-3.7GHz 65W 50V SSG 20dB GaN
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
18 шт., срок 7-9 недель
Бесплатная доставка 5Post, СДЭК и Я.Доставка
77 860 руб.
Добавить в корзину 1 шт.
на сумму 77 860 руб.
Описание
Semiconductors\Discrete Semiconductors\Transistors\RF Transistors
QPD GaN RF Transistors Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Технические параметры
| Brand: | Qorvo |
| Configuration: | Single |
| Development Kit: | QPD1015PCB401 |
| Factory Pack Quantity: | 25 |
| Gain: | 20 dB |
| Id - Continuous Drain Current: | 2.5 A |
| Manufacturer: | Qorvo |
| Maximum Operating Temperature: | +85 C |
| Minimum Operating Temperature: | -40 C |
| Moisture Sensitive: | Yes |
| Mounting Style: | SMD/SMT |
| Operating Frequency: | 3.7 GHz |
| Operating Temperature Range: | -40 C to+85 C |
| Output Power: | 70 W |
| Package / Case: | NI-360 |
| Packaging: | Tray |
| Pd - Power Dissipation: | 64 W |
| Product Category: | RF JFET Transistors |
| Product Type: | RF JFET Transistors |
| Subcategory: | Transistors |
| Technology: | GaN SiC |
| Transistor Polarity: | N-Channel |
| Transistor Type: | HEMT |
| Vds - Drain-Source Breakdown Voltage: | 50 V |
| Vgs - Gate-Source Breakdown Voltage: | 145 V |
| Vgs th - Gate-Source Threshold Voltage: | -2.8 V |
Сроки доставки
Выберите регион, чтобы увидеть способы получения товара.
