TGA2576-2-FL, RF Amplifier 2.5-6.0GHz Gain 26dB GaN
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Описание
Semiconductors\Wireless & RF Integrated Circuits\RF Amplifier
GaN Power Amplifiers Qorvo GaN Power Amplifiers allow unique, cost-effective solutions across a variety of applications. With these high-power amplifiers designed for military, commercial, satellite communications and radar systems, Qorvo offers GaN-based products meeting today's market needs and future requirements.
Технические параметры
| Brand: | Qorvo |
| Factory Pack Quantity: | 10 |
| Gain: | 29 dB |
| Manufacturer: | Qorvo |
| Maximum Operating Temperature: | +85 C |
| Minimum Operating Temperature: | -40 C |
| Moisture Sensitive: | Yes |
| Mounting Style: | SMD/SMT |
| Operating Frequency: | 2.5 GHz to 6 GHz |
| Operating Supply Current: | 1.55 A |
| Operating Supply Voltage: | 30 V |
| P1dB - Compression Point: | 46.5 dBm |
| Package/Case: | 17.3 mm x 11.4 mm |
| Packaging: | Tray |
| Part # Aliases: | TGA2576 1100041 |
| Pd - Power Dissipation: | 93 W |
| Product Category: | RF Amplifier |
| Product Type: | RF Amplifier |
| Product: | GaN |
| Subcategory: | Wireless & RF Integrated Circuits |
| Supply Voltage - Max: | 40 V |
| Technology: | GaN SiC |
| Type: | Power Amplifiers |
| Вес, г | 33 |
Техническая документация
Datasheet
pdf, 535 КБ
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