MJE340G, Bipolar Transistors - BJT 0.5A 300V 20W NPN
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180 руб.
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160 руб.
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Описание
Описание Транзистор: NPN, биполярный, 300В, 0,5А, 20Вт, TO225 Характеристики
| Категория | Транзистор |
| Тип | биполярный |
| Вид | NPN |
Технические параметры
| Brand | ON Semiconductor |
| Collector- Base Voltage VCBO | 3 V |
| Collector- Emitter Voltage VCEO Max | 300 V |
| Configuration | Single |
| Continuous Collector Current | 0.5 A |
| DC Collector/Base Gain hfe Min | 30 |
| Emitter- Base Voltage VEBO | 3 V |
| Factory Pack Quantity | 500 |
| Height | 11.04 mm(Max) |
| Length | 7.74 mm(Max) |
| Manufacturer | ON Semiconductor |
| Maximum DC Collector Current | 0.5 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -65 C |
| Mounting Style | SMD/SMT |
| Package / Case | TO-225-3 |
| Packaging | Bulk |
| Pd - Power Dissipation | 20 W |
| Product Category | Bipolar Transistors-BJT |
| RoHS | Details |
| Series | MJE340 |
| Transistor Polarity | NPN |
| Width | 2.66 mm(Max) |
| Case | TO225 |
| Collector current | 0.5A |
| Collector-emitter voltage | 300V |
| Current gain | 30…240 |
| Kind of package | bulk |
| Mounting | THT |
| Polarisation | bipolar |
| Power dissipation | 20W |
| Type of transistor | NPN |
| Maximum Collector Emitter Voltage | 300 V |
| Maximum Emitter Base Voltage | 3 V |
| Maximum Power Dissipation | 20 W |
| Minimum DC Current Gain | 30 |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-225 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Type | NPN |
| Вес, г | 0.64 |
