CGHV40180F, RF JFET Transistors GaN HEMT
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Описание
Semiconductors\Discrete Semiconductors\Transistors\RF Transistors
CG2H40xx & CG2H30xx GaN HEMTsWolfspeed CG2H40xx and CG2H30xx GaN (Gallium Nitride) HEMTs are High Electron Mobility Transistors designed to operate from a 28V rail. The CG2H40xx and CG2H30xx Transistors offer a general-purpose broadband solution to a variety of RF and microwave applications. The high efficiency, high gain, and wide bandwidth capabilities of these HEMTs make them ideal for linear and compressed amplifier circuits. The CG2H40xx and CG2H30xx transistors are available in a wide variety of package types for design flexibility, including screw-down, solder-down, pill, and flange packages. Typical applications include broadband amplifiers, cellular infrastructure, and radar.
Технические параметры
| Brand: | Wolfspeed |
| Development Kit: | CGHV40180F-TB1 |
| Factory Pack Quantity: Factory Pack Quantity: | 1 |
| Gain: | 20.3 dB |
| Id - Continuous Drain Current: | 18 A |
| Manufacturer: | Wolfspeed |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Screw Mount |
| Operating Frequency: | DC to 1000 MHz |
| Output Power: | 180 W |
| Package / Case: | 440223 |
| Packaging: | Tray |
| Pd - Power Dissipation: | 150 W |
| Product Category: | RF JFET Transistors |
| Product Type: | RF JFET Transistors |
| Subcategory: | Transistors |
| Technology: | GaN |
| Transistor Polarity: | N-Channel |
| Transistor Type: | HEMT |
| Vds - Drain-Source Breakdown Voltage: | 125 V |
| Vgs - Gate-Source Breakdown Voltage: | -10 V, 2 V |
| Vgs th - Gate-Source Threshold Voltage: | -3.8 V |
| Вес, г | 28.35 |
