IRF2804L

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910 руб.

от 2 шт. — 780 руб.

от 5 шт. — 702 руб.

от 10 шт. — 660 руб.

Добавить в корзину 1 шт. на сумму 910 руб.

Номенклатурный номер: 8001973028

Электроэлемент

POWER FIELD-EFFECT TRANSISTOR, 75A I(D), 40V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-262AA

Category	Discrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C	75A(Tc)
Design Resources	IRF2804LPBF Saber ModelIRF2804LPBF Spice Model
Drain to Source Voltage (Vdss)	40V
Family	FETs-Single
FET Feature	Standard
FET Type	MOSFET N-Channel, Metal Oxide
Gate Charge (Qg) @ Vgs	240nC @ 10V
Input Capacitance (Ciss) @ Vds	6450pF @ 25V
Mounting Type	Through Hole
Online Catalog	N-Channel Standard FETs
Package / Case	TO-262-3 Long Leads, I?Pak, TO-262AA
Packaging	Tube
PCN Assembly/Origin	Backend Wafer Transfer 23/Oct/2013
Power - Max	300W
Product Training Modules	High Voltage Integrated Circuits(HVIC Gate Drivers)Discrete Power MOSFETs 40V and Below
Rds On (Max) @ Id, Vgs	2.3 mOhm @ 75A, 10V
Series	HEXFET®
Standard Package	50
Supplier Device Package	TO-262
Vgs(th) (Max) @ Id	4V @ 250µA
Brand:	Infineon Technologies
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1000
Id - Continuous Drain Current:	280 A
Manufacturer:	Infineon
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package / Case:	TO-262-3
Packaging:	Tube
Part # Aliases:	IRF2804LPBF SP001550958
Pd - Power Dissipation:	330 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	160 nC
Rds On - Drain-Source Resistance:	2.3 mOhms
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Вес, г	1.43

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