IRFB4410PBF, Транзистор полевой N-канальный 100В 96А 250Вт
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
290 руб.
Мин. кол-во для заказа 2 шт.
от 10 шт. —
240 руб.
от 20 шт. —
218 руб.
от 50 шт. —
204 руб.
Добавить в корзину 2 шт.
на сумму 580 руб.
Описание
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Транзистор полевой N-канальный 100В 96А 250Вт
Технические параметры
| Корпус | TO-220AB | |
| Automotive | No | |
| Channel Mode | Enhancement | |
| Channel Type | N | |
| Configuration | Single | |
| ECCN (US) | EAR99 | |
| EU RoHS | Compliant with Exemption | |
| Lead Shape | Through Hole | |
| Maximum Continuous Drain Current (A) | 88 | |
| Maximum Drain Source Resistance (MOhm) | 10 10V | |
| Maximum Drain Source Voltage (V) | 100 | |
| Maximum Gate Source Voltage (V) | ±20 | |
| Maximum Operating Temperature (°C) | 175 | |
| Maximum Power Dissipation (mW) | 200000 | |
| Minimum Operating Temperature (°C) | -55 | |
| Mounting | Through Hole | |
| Number of Elements per Chip | 1 | |
| Packaging | Tube | |
| Part Status | Active | |
| PCB changed | 3 | |
| Pin Count | 3 | |
| PPAP | No | |
| Process Technology | HEXFET | |
| Product Category | Power MOSFET | |
| Standard Package Name | TO-220 | |
| Supplier Package | TO-220AB | |
| Tab | Tab | |
| Typical Fall Time (ns) | 50 | |
| Typical Gate Charge @ 10V (nC) | 120 | |
| Typical Gate Charge @ Vgs (nC) | 120 10V | |
| Typical Input Capacitance @ Vds (pF) | 5150 50V | |
| Typical Rise Time (ns) | 80 | |
| Typical Turn-Off Delay Time (ns) | 55 | |
| Typical Turn-On Delay Time (ns) | 24 | |
| Brand: | Infineon Technologies | |
| Channel Mode: | Enhancement | |
| Configuration: | Single | |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 | |
| Id - Continuous Drain Current: | 96 A | |
| Manufacturer: | Infineon | |
| Maximum Operating Temperature: | +175 C | |
| Minimum Operating Temperature: | -55 C | |
| Mounting Style: | Through Hole | |
| Number of Channels: | 1 Channel | |
| Package / Case: | TO-220-3 | |
| Packaging: | Tube | |
| Pd - Power Dissipation: | 250 W | |
| Product Category: | MOSFET | |
| Product Type: | MOSFET | |
| Qg - Gate Charge: | 120 nC | |
| Rds On - Drain-Source Resistance: | 8 mOhms | |
| Subcategory: | MOSFETs | |
| Technology: | Si | |
| Transistor Polarity: | N-Channel | |
| Transistor Type: | 1 N-Channel | |
| Vds - Drain-Source Breakdown Voltage: | 100 V | |
| Vgs - Gate-Source Voltage: | -20 V, +20 V | |
| Vgs th - Gate-Source Threshold Voltage: | 1.8 V | |
| Вес, г | 3.5 |
Техническая документация
Datasheet
pdf, 808 КБ
IRFB4410PBF
pdf, 797 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
