IRF1010EZSTRLP, MOSFET MOSFT 60V 84A 8.5mOhm 58nC
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Designing Power SystemsInfineon Power MOSFETs are designed to bring more efficiency and power density to designers' products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters, and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply, and power consumption.
Технические параметры
| Brand: | Infineon/IR |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3200 |
| Fall Time: | 54 ns |
| Id - Continuous Drain Current: | 75 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-263-3 |
| Part # Aliases: | IRF1010EZSTRLP SP001561470 |
| Pd - Power Dissipation: | 140 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 58 nC |
| Rds On - Drain-Source Resistance: | 8.5 mOhms |
| Rise Time: | 90 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 38 ns |
| Typical Turn-On Delay Time: | 19 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Channel Type | N Channel |
| Drain Source On State Resistance | 0.0068Ом |
| Power Dissipation | 140Вт |
| Количество Выводов | 3вывод(-ов) |
| Линейка Продукции | HEXFET |
| Максимальная Рабочая Температура | 175 C |
| Монтаж транзистора | Surface Mount |
| Напряжение Измерения Rds(on) | 10В |
| Напряжение Истока-стока Vds | 60В |
| Непрерывный Ток Стока | 75А |
| Полярность Транзистора | N Канал |
| Пороговое Напряжение Vgs | 4В |
| Рассеиваемая Мощность | 140Вт |
| Сопротивление во Включенном Состоянии Rds(on) | 0.0068Ом |
| Стиль Корпуса Транзистора | TO-263(D2PAK) |
| Уровень Чувствительности к Влажности (MSL) | MSL 1-Безлимитный |
| Channel Mode | Enhancement |
| Forward Diode Voltage | 1.3V |
| Maximum Continuous Drain Current | 84 A |
| Maximum Drain Source Resistance | 8.5 mΩ |
| Maximum Drain Source Voltage | 60 V |
| Maximum Gate Source Voltage | ±20 V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 140 W |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | D2PAK(TO-263) |
| Pin Count | 3 |
| Series | IRF1010EZS |
| Transistor Configuration | Single |
| Typical Gate Charge @ Vgs | 58 nC @ 10 V |
| Width | 9.65mm |
| Вес, г | 4 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
