BSS83PH6327XTSA1

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110 руб.

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Номенклатурный номер: 8005909405

Описание Транзистор P-МОП, полевой, 60В 0,33A 0,36Вт 2Ом SO

AEC Qualified Number	AEC-Q101
Automotive	Yes
Channel Mode	Enhancement
Channel Type	P
Configuration	Single
Maximum Continuous Drain Current - (A)	0.33
Maximum Drain Source Resistance - (mOhm)	2000@10V
Maximum Drain Source Voltage - (V)	60
Maximum Gate Source Voltage - (V)	??20
Maximum Gate Threshold Voltage - (V)	2
Maximum Power Dissipation - (mW)	360
Military	No
Number of Elements per Chip	1
Operating Temperature - (??C)	-55~150
Packaging	Tape and Reel
Pin Count	3
Standard Package Name	SOT-23
Supplier Package	SOT-23
Typical Gate Charge @ 10V - (nC)	2.38
Typical Gate Charge @ Vgs - (nC)	2.38@10V
Typical Input Capacitance @ Vds - (pF)	62@25V
Typical Output Capacitance - (pF)	19
Case	PG-SOT23
Drain current	-0.33A
Drain-source voltage	-60V
Gate-source voltage	±20V
Kind of channel	enhanced
Kind of package	reel
Manufacturer	INFINEON TECHNOLOGIES
Mounting	SMD
On-state resistance	2Ω
Polarisation	unipolar
Power dissipation	0.36W
Technology	SIPMOS™
Type of transistor	P-MOSFET
Maximum Continuous Drain Current	330 mA
Maximum Drain Source Resistance	3 Ω
Maximum Drain Source Voltage	60 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Gate Threshold Voltage	2V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	360 mW
Minimum Gate Threshold Voltage	1V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Package Type	SOT-23
Series	SIPMOS
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	2.38 nC @ 10 V
Width	1.3mm

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