STGW25H120F2
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600 шт., срок 7-9 недель
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Описание
1200V H Series Trench Gate Field-Stop IGBTs
STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5μs minimum short circuit withstand time at T J =150°C, minimal collector current turn off tail, and very low saturation voltage (V CE(sat) ) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive V CE(sat ) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5μs minimum short circuit withstand time at T J =150°C, minimal collector current turn off tail, and very low saturation voltage (V CE(sat) ) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive V CE(sat ) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Технические параметры
| Brand: | STMicroelectronics |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV |
| Collector-Emitter Saturation Voltage: | 2.1 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 50 A |
| Continuous Collector Current Ic Max: | 25 A |
| Factory Pack Quantity: Factory Pack Quantity: | 600 |
| Gate-Emitter Leakage Current: | 250 nA |
| Manufacturer: | STMicroelectronics |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 375 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Series: | STGW25H120F2 |
| Subcategory: | IGBTs |
| Technology: | Si |
Техническая документация
Datasheet
pdf, 934 КБ
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