BSP322PH6327XTSA1
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см. техническую документацию
см. техническую документацию
250 руб.
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190 руб.
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161 руб.
от 75 шт. —
140 руб.
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Описание
Электроэлемент
MOSFET, P-CH, -100V, -1A, SOT-223-4; Transistor Polarity:P Channel; Continuous Drain Current Id:-1A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.6ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.5
Технические параметры
| Brand | Infineon Technologies |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 1000 |
| Fall Time | 8.3 ns |
| Forward Transconductance - Min | 0.7 S |
| Height | 1.6 mm |
| Id - Continuous Drain Current | -1 A |
| Length | 6.5 mm |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SOT-223-4 |
| Packaging | Reel |
| Part # Aliases | BSP322P H6327 SP001058784 |
| Pd - Power Dissipation | 1.8 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 12.4 nC |
| Rds On - Drain-Source Resistance | 1 Ohms |
| Rise Time | 4.3 ns |
| RoHS | Details |
| Series | BSP322 |
| Technology | Si |
| Transistor Polarity | P-Channel |
| Transistor Type | 1 P-Channel |
| Typical Turn-Off Delay Time | 21.2 ns |
| Typical Turn-On Delay Time | 4.6 ns |
| Unit Weight | 0.008826 oz |
| Vds - Drain-Source Breakdown Voltage | -100 V |
| Vgs - Gate-Source Voltage | +/-20 V |
| Vgs th - Gate-Source Threshold Voltage | -2 V |
| Width | 3.5 mm |
| Automotive | Yes |
| Channel Type | P |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 1 |
| Maximum Drain Source Resistance (mOhm) | 800@10V |
| Maximum Drain Source Voltage (V) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 1 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 1800 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 4 |
| PPAP | Unknown |
| Process Technology | SIPMOS |
| Standard Package Name | SOT |
| Supplier Package | SOT-223 |
| Tab | Tab |
| Typical Fall Time (ns) | 8.3 |
| Typical Gate Charge @ 10V (nC) | 12.4 |
| Typical Gate Charge @ Vgs (nC) | 12.4@10V |
| Typical Gate to Drain Charge (nC) | 4.3 |
| Typical Gate to Source Charge (nC) | 0.8 |
| Typical Input Capacitance @ Vds (pF) | 280@25V |
| Typical Output Capacitance (pF) | 70 |
| Typical Reverse Recovery Charge (nC) | 84 |
| Typical Rise Time (ns) | 4.3 |
| Typical Turn-Off Delay Time (ns) | 21.2 |
| Typical Turn-On Delay Time (ns) | 4.6 |
| Case | PG-SOT223 |
| Drain current | -1A |
| Drain-source voltage | -100V |
| Gate-source voltage | ±20V |
| Kind of channel | enhanced |
| On-state resistance | 0.8Ω |
| Polarisation | unipolar |
| Power dissipation | 1.8W |
| Type of transistor | P-MOSFET |
| Вес, г | 0.39 |
Техническая документация
Datasheet
pdf, 456 КБ
Datasheet BSP322P (Infineon)
pdf, 504 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
