STW50N65DM2AG
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см. техническую документацию
см. техническую документацию
600 шт., срок 7-9 недель
2 010 руб.
от 30 шт. —
1 510 руб.
от 120 шт. —
1 180 руб.
от 510 шт. —
1 033.39 руб.
Добавить в корзину 1 шт.
на сумму 2 010 руб.
Альтернативные предложения1
Описание
Standard Products STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discretes, and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models, and simulation tools, are available to make adding to a design-in easy.
Технические параметры
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 600 |
| Fall Time: | 10.5 ns |
| Id - Continuous Drain Current: | 38 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-247-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 300 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | Power MOSFETs |
| Qg - Gate Charge: | 70 nC |
| Qualification: | AEC-Q101 |
| Rds On - Drain-Source Resistance: | 87 mOhms |
| Rise Time: | 21 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | High Voltage |
| Typical Turn-Off Delay Time: | 89 ns |
| Typical Turn-On Delay Time: | 22.5 ns |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
Техническая документация
Datasheet STW50N65DM2AG
pdf, 257 КБ
Сроки доставки
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