STB43N65M5, MOSFET Automotive-grade N-channel 650 V, 0.058 Ohm typ 42 A MDmesh M5 Power MOSFET
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см. техническую документацию
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164 шт., срок 7-9 недель
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Описание
This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout.
Технические параметры
| Automotive Standard | AEC-Q101 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Forward Diode Voltage | 1.6V |
| Maximum Continuous Drain Current | 7 A |
| Maximum Drain Source Resistance | 630 mΩ |
| Maximum Gate Source Voltage | ±25 V |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 70 W |
| Minimum Gate Threshold Voltage | 3V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | D2PAK(TO-263) |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Typical Gate Charge @ Vgs | 15 nC @ 10 V |
| Width | 9.35mm |
| AEC Qualified Number | AEC-Q101 |
| Automotive | Yes |
| Maximum Continuous Drain Current - (A) | 5.5 |
| Maximum Drain Source Resistance - (mOhm) | 0.63@10V |
| Maximum Drain Source Voltage - (V) | 650 |
| Maximum Gate Source Voltage - (V) | ??25 |
| Maximum Gate Threshold Voltage - (V) | 5 |
| Maximum Power Dissipation - (mW) | 250000 |
| Military | No |
| Operating Temperature - (??C) | -55~150 |
| Packaging | Tape and Reel |
| Process Technology | MDmesh M5 |
| Standard Package Name | TO-263 |
| Supplier Package | D2PAK |
| Typical Gate Charge @ 10V - (nC) | 100 |
| Typical Gate Charge @ Vgs - (nC) | 100@10V |
| Typical Input Capacitance @ Vds - (pF) | 4400@100V |
| Вес, г | 2.24 |
Техническая документация
Datasheet
pdf, 848 КБ
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