CDBJFSC5650-G, Schottky Diodes & Rectifiers SiC POWER SCHOTTKY 5A 650V
880 руб.
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700 руб.
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Описание
Диод карбид кремния Schottky 650V 5A (DC) Through Hole TO-220F
Технические параметры
| Capacitance @ Vr, F | 430pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 5A (DC) |
| Current - Reverse Leakage @ Vr | 100ВµA @ 650V |
| Diode Type | Silicon Carbide Schottky |
| ECCN | EAR99 |
| HTSUS | 8541.10.0080 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | -55В°C ~ 175В°C |
| Package | Tube |
| Package / Case | TO-220-2 Full Pack |
| Reverse Recovery Time (trr) | 0ns |
| RoHS Status | ROHS3 Compliant |
| Speed | No Recovery Time > 500mA (Io) |
| Supplier Device Package | TO-220F |
| Voltage - DC Reverse (Vr) (Max) | 650V |
| Voltage - Forward (Vf) (Max) @ If | 1.7V @ 5A |
