RD3L08BGNTL
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см. техническую документацию
см. техническую документацию
1413 шт., срок 7-9 недель
810 руб.
от 10 шт. —
620 руб.
от 100 шт. —
458 руб.
от 500 шт. —
337.10 руб.
Добавить в корзину 1 шт.
на сумму 810 руб.
Альтернативные предложения1
Описание
Electronic Vehicle (EV) Solutions ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to improve efficiency and performance in state-of-the-art EVs. ROHM offers products optimized for various solutions, with a focus on dedicated EV blocks, such as the main inverter, DC-DC converter, onboard charger, and electric compressor.
Технические параметры
| Brand: | ROHM Semiconductor |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 2500 |
| Fall Time: | 150 ns |
| Id - Continuous Drain Current: | 80 A |
| Manufacturer: | ROHM Semiconductor |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | DPAK-3(TO-252-3) |
| Packaging: | Reel, Cut Tape |
| Part # Aliases: | RD3L08BGN |
| Pd - Power Dissipation: | 119 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 71 nC |
| Rds On - Drain-Source Resistance: | 5.5 mOhms |
| Rise Time: | 36 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 99 ns |
| Typical Turn-On Delay Time: | 28 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
Сроки доставки
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