RVQ040N05HZGTR
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
17864 шт., срок 7-9 недель
290 руб.
от 10 шт. —
230 руб.
от 100 шт. —
153 руб.
от 500 шт. —
115.61 руб.
Добавить в корзину 1 шт.
на сумму 290 руб.
Альтернативные предложения3
Описание
Automotive Power Solutions ROHM Semiconductor Automotive Power Solutions offer a broad portfolio of products and solutions for automotive systems, from the infotainment center and instrument cluster to powertrain and body ECUs. Also, as the demand for next-generation vehicles that embody these principles increases and automatic driving and smart cities will soon be realized, high-performance ICs and high power devices are becoming indispensable. ROHM contributes to the evolution and advancement of the automotive sector and next-generation cars by taking a quality-first approach to product manufacturing while ensuring long-term, stable supply.
Технические параметры
| Brand: | ROHM Semiconductor |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 3000 |
| Fall Time: | 12 ns |
| Id - Continuous Drain Current: | 4 A |
| Manufacturer: | ROHM Semiconductor |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | SOT-457T-6 |
| Packaging: | Reel, Cut Tape |
| Part # Aliases: | RVQ040N05HZG |
| Pd - Power Dissipation: | 1.25 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 6.3 nC |
| Qualification: | AEC-Q101 |
| Rds On - Drain-Source Resistance: | 53 mOhms |
| Rise Time: | 15 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 40 ns |
| Typical Turn-On Delay Time: | 12 ns |
| Vds - Drain-Source Breakdown Voltage: | 45 V |
| Vgs - Gate-Source Voltage: | -21 V, +21 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 4 A |
| Maximum Drain Source Voltage | 45 V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-457T |
| Pin Count | 6 |
| Transistor Material | Si |
Техническая документация
Datasheet RVQ040N05HZGTR
pdf, 1419 КБ
Сроки доставки
Выберите регион, чтобы увидеть способы получения товара.
