RD3T075CNTL1
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1452 шт., срок 7-9 недель
440 руб.
от 10 шт. —
340 руб.
от 100 шт. —
242 руб.
от 500 шт. —
191.22 руб.
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на сумму 440 руб.
Альтернативные предложения1
Описание
Silicon Power MOSFETs ROHM Semiconductor Silicon Power MOSFETs feature ultra-fast switching speeds and low on-resistance. These MOSFETs are available in a wide lineup of packages, including the miniature 0604 size to save space in various designs.
Технические параметры
| Brand: | ROHM Semiconductor |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 2500 |
| Fall Time: | 12 ns |
| Forward Transconductance - Min: | 1.5 S |
| Id - Continuous Drain Current: | 7.5 A |
| Manufacturer: | ROHM Semiconductor |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | DPAK-3(TO-252-3) |
| Part # Aliases: | RD3T075CN |
| Pd - Power Dissipation: | 52 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 15 nC |
| Rds On - Drain-Source Resistance: | 325 mOhms |
| Rise Time: | 22 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Typical Turn-Off Delay Time: | 24 ns |
| Typical Turn-On Delay Time: | 20 ns |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 3.25 V |
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