HP8KA1TB
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см. техническую документацию
см. техническую документацию
2500 шт., срок 7-9 недель
370 руб.
от 10 шт. —
280 руб.
от 100 шт. —
202 руб.
от 500 шт. —
159.42 руб.
Добавить в корзину 1 шт.
на сумму 370 руб.
Альтернативные предложения1
Описание
Silicon Power MOSFETs
ROHM Semiconductor Silicon Power MOSFETs feature ultra-fast switching speeds and low on-resistance. These MOSFETs are available in a wide lineup of packages, including the miniature 0604 size to save space in various designs.
ROHM Semiconductor Silicon Power MOSFETs feature ultra-fast switching speeds and low on-resistance. These MOSFETs are available in a wide lineup of packages, including the miniature 0604 size to save space in various designs.
Технические параметры
| Brand: | ROHM Semiconductor |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 40 ns, 40 ns |
| Forward Transconductance - Min: | 14 S, 14 S |
| Id - Continuous Drain Current: | 14 A |
| Manufacturer: | ROHM Semiconductor |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package / Case: | HSOP-8 |
| Part # Aliases: | HP8KA1 |
| Pd - Power Dissipation: | 3 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFETs |
| Qg - Gate Charge: | 24 nC |
| Rds On - Drain-Source Resistance: | 7 mOhms, 7 mOhms |
| Rise Time: | 30 ns, 30 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 2 N-channel |
| Type: | Power MOSFET |
| Typical Turn-Off Delay Time: | 85 ns, 85 ns |
| Typical Turn-On Delay Time: | 25 ns, 25 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
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