TK65S04N1L,LQ
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
7976 шт., срок 7-9 недель
610 руб.
Добавить в корзину 1 шт.
на сумму 610 руб.
Альтернативные предложения1
Описание
U-MOSVIII-H Low Voltage High Efficiency MOSFETs Toshiba U-MOSVIII-H Low Voltage High-Efficiency MOSFETs are specifically designed for use in the secondary side of AC-DC power supplies for notebook PC adapters, game consoles, servers, desktop PCs, flat-panel displays, and more. They are also designed for use in DC-DC power supplies for communication equipment, servers, and data centers. Toshiba U-MOSVIII-H Low Voltage High-Efficiency MOSFETs are fabricated with the latest Gen 8 trench MOS process, which helps to improve the efficiency of power supplies. Other features include low drain-source on-resistance, low leakage current, and high avalanche ruggedness. The series also includes automotive-qualified MOSFETs in a small package.
Технические параметры
Brand: | Toshiba |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: | 2000 |
Fall Time: | 17 ns |
Id - Continuous Drain Current: | 65 A |
Manufacturer: | Toshiba |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package/Case: | DPAK-3(TO-252-3) |
Pd - Power Dissipation: | 68 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 39 nC |
Qualification: | AEC-Q101 |
Rds On - Drain-Source Resistance: | 3.3 mOhms |
Rise Time: | 8 ns |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 51 ns |
Typical Turn-On Delay Time: | 20 ns |
Vds - Drain-Source Breakdown Voltage: | 40 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
Техническая документация
Datasheet
pdf, 321 КБ
Сроки доставки
Выберите регион, чтобы увидеть способы получения товара.