TK65S04N1L,LQ

TK65S04N1L,LQ
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7976 шт., срок 7-9 недель
610 руб.
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Номенклатурный номер: 8007545595
Бренд: Toshiba

Описание

U-MOSVIII-H Low Voltage High Efficiency MOSFETs Toshiba U-MOSVIII-H Low Voltage High-Efficiency MOSFETs are specifically designed for use in the secondary side of AC-DC power supplies for notebook PC adapters, game consoles, servers, desktop PCs, flat-panel displays, and more. They are also designed for use in DC-DC power supplies for communication equipment, servers, and data centers. Toshiba U-MOSVIII-H Low Voltage High-Efficiency MOSFETs are fabricated with the latest Gen 8 trench MOS process, which helps to improve the efficiency of power supplies. Other features include low drain-source on-resistance, low leakage current, and high avalanche ruggedness. The series also includes automotive-qualified MOSFETs in a small package.

Технические параметры

Brand: Toshiba
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: 2000
Fall Time: 17 ns
Id - Continuous Drain Current: 65 A
Manufacturer: Toshiba
Maximum Operating Temperature: +175 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Package/Case: DPAK-3(TO-252-3)
Pd - Power Dissipation: 68 W
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 39 nC
Qualification: AEC-Q101
Rds On - Drain-Source Resistance: 3.3 mOhms
Rise Time: 8 ns
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 51 ns
Typical Turn-On Delay Time: 20 ns
Vds - Drain-Source Breakdown Voltage: 40 V
Vgs - Gate-Source Voltage: -20 V, +20 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V

Техническая документация

Datasheet
pdf, 321 КБ

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