TK60F10N1L,LXGQ
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
1750 шт., срок 7-9 недель
700 руб.
Добавить в корзину 1 шт.
на сумму 700 руб.
Альтернативные предложения1
Описание
Automotive Devices Toshiba Automotive Devices offer an extensive lineup of MOSFETs, optical isolation, transistors, and diodes, to cover various automotive applications in 12V to 48V battery systems. In addition, Toshiba offers automotive-grade motor control drivers. Toshiba automotive devices are AEC-Q100 and AEC-Q101 qualified.
Технические параметры
| Brand: | Toshiba |
| Channel Mode: | Enhancement |
| Factory Pack Quantity: | 1000 |
| Fall Time: | 18 ns |
| Id - Continuous Drain Current: | 60 A |
| Manufacturer: | Toshiba |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Moisture Sensitive: | Yes |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-220SM-3 |
| Pd - Power Dissipation: | 205 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 60 nC |
| Qualification: | AEC-Q101 |
| Rds On - Drain-Source Resistance: | 6.11 mOhms |
| Rise Time: | 12 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 65 ns |
| Typical Turn-On Delay Time: | 29 ns |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 3.5 V |
Техническая документация
Datasheet
pdf, 724 КБ
Сроки доставки
Выберите регион, чтобы увидеть способы получения товара.
