TK210V65Z,LQ
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
4633 шт., срок 7-9 недель
970 руб.
Добавить в корзину 1 шт.
на сумму 970 руб.
Альтернативные предложения2
Описание
650V DTMOS-VI Superjunction MOSFETs Toshiba 650V DTMOS-VI Superjunction MOSFETs are designed to operate in switching power supplies. These N-channel MOSFETs feature high-speed switching properties with lower capacitance. The 650V DTMOS-VI Superjunction MOSFETs silicon MOSFETs offer a typical 0.092Ω to 0.175Ω low drain source on-resistance. These devices feature a drain-source voltage of 10V.
Технические параметры
Brand: | Toshiba |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: | 2500 |
Fall Time: | 4 ns |
Id - Continuous Drain Current: | 15 A |
Manufacturer: | Toshiba |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package/Case: | DFN-8 |
Pd - Power Dissipation: | 130 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 25 nC |
Rds On - Drain-Source Resistance: | 210 mOhms |
Rise Time: | 14 ns |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 66 ns |
Typical Turn-On Delay Time: | 34 ns |
Vds - Drain-Source Breakdown Voltage: | 650 V |
Vgs - Gate-Source Voltage: | -30 V, +30 V |
Vgs th - Gate-Source Threshold Voltage: | 4 V |
Техническая документация
Datasheet
pdf, 464 КБ
Сроки доставки
Выберите регион, чтобы увидеть способы получения товара.