TK170V65Z,LQ
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см. техническую документацию
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Описание
650V DTMOS-VI Superjunction MOSFETs Toshiba 650V DTMOS-VI Superjunction MOSFETs are designed to operate in switching power supplies. These N-channel MOSFETs feature high-speed switching properties with lower capacitance. The 650V DTMOS-VI Superjunction MOSFETs silicon MOSFETs offer a typical 0.092Ω to 0.175Ω low drain source on-resistance. These devices feature a drain-source voltage of 10V.
Технические параметры
| Brand: | Toshiba |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 2500 |
| Fall Time: | 4 ns |
| Id - Continuous Drain Current: | 18 A |
| Manufacturer: | Toshiba |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package/Case: | DFN-8 |
| Pd - Power Dissipation: | 150 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 29 nC |
| Rds On - Drain-Source Resistance: | 170 mOhms |
| Rise Time: | 16 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 70 ns |
| Typical Turn-On Delay Time: | 37 ns |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
Техническая документация
Datasheet
pdf, 470 КБ
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