BSZ16DN25NS3GATMA1
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см. техническую документацию
670 руб.
от 10 шт. —
510 руб.
от 100 шт. —
381 руб.
от 500 шт. —
280.42 руб.
Добавить в корзину 1 шт.
на сумму 670 руб.
Описание
The Infineon 250V OptiMOS products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives.
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 10.9 A |
| Maximum Drain Source Resistance | 0.165 O |
| Maximum Drain Source Voltage | 250 V |
| Maximum Gate Threshold Voltage | 4V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | PQFN 3x3 |
| Pin Count | 8 |
| Series | OptiMOS 3 |
| Transistor Material | Si |
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 5000 |
| Fall Time: | 4 ns |
| Forward Transconductance - Min: | 7 S |
| Id - Continuous Drain Current: | 10.9 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | TSDSON-8 |
| Part # Aliases: | BSZ16DN25NS3 G SP000781800 |
| Pd - Power Dissipation: | 62.5 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 11.4 nC |
| Rds On - Drain-Source Resistance: | 146 mOhms |
| REACH - SVHC: | Details |
| Rise Time: | 4 ns |
| Series: | OptiMOS 3 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | OptiMOS |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 11 ns |
| Typical Turn-On Delay Time: | 6 ns |
| Vds - Drain-Source Breakdown Voltage: | 250 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
