BSZ0911LSATMA1
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Описание
MOSFET, N-CH, 30V, 40A, TSDSON-FL ROHS COMPLIANT: YES
Технические параметры
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Factory Pack Quantity: | 5000 |
| Fall Time: | 2.4 ns |
| Forward Transconductance - Min: | 34 S |
| Id - Continuous Drain Current: | 40 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | TSDSON-8 |
| Part # Aliases: | BSZ0911LS SP005424280 |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 10 nC |
| Rds On - Drain-Source Resistance: | 7.2 mOhms |
| Rise Time: | 3.4 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 12 ns |
| Typical Turn-On Delay Time: | 2.5 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
Техническая документация
Datasheet
pdf, 901 КБ
