IRL1404ZS
780 руб.
от 2 шт. —
670 руб.
от 5 шт. —
591 руб.
от 10 шт. —
553.75 руб.
Добавить в корзину 1 шт.
на сумму 780 руб.
Описание
Электроэлемент
MOSFET, N-CH, 40V, 120A, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0025ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V;
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current - (A) | 200 |
| Maximum Drain Source Resistance - (mOhm) | 3.1@10V |
| Maximum Drain Source Voltage - (V) | 40 |
| Maximum Gate Source Voltage - (V) | ??16 |
| Maximum Power Dissipation - (mW) | 230000 |
| Military | No |
| Number of Elements per Chip | 1 |
| Operating Temperature - (??C) | -55~175 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Process Technology | HEXFET |
| Standard Package Name | TO-263 |
| Supplier Package | D2PAK |
| Typical Gate Charge @ Vgs - (nC) | 75@5V |
| Typical Input Capacitance @ Vds - (pF) | 5080@25V |
| Вес, г | 2.02 |
Техническая документация
Datasheet IRL1404ZSTRLPBF
pdf, 285 КБ
