650 руб.
от 2 шт.620 руб.
Добавить в корзину 1 шт. на сумму 650 руб.
Номенклатурный номер: 8008422264
Страна происхождения: КИТАЙ
Бренд / Производитель: INFINEON TECHNOLOGIES AG.


MOSFET, N-CH, 40V, 120A, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0025ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V; Power Dissipation Pd:230W; Transistor Case Style:TO-263AB; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:HEXFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

Технические параметры

Brand Infineon/IR
Configuration Single
Factory Pack Quantity 3200
Fall Time 49 ns
Forward Transconductance - Min 120 S
Height 4.4 mm
Id - Continuous Drain Current 200 A
Length 10 mm
Manufacturer Infineon
Maximum Operating Temperature +175 C
Mounting Style SMD/SMT
Number of Channels 1 Channel
Package / Case TO-263-3
Packaging Reel
Pd - Power Dissipation 230 W
Product Category MOSFET
Qg - Gate Charge 110 nC
Rds On - Drain-Source Resistance 3.1 mOhms
Rise Time 180 ns
RoHS Details
Technology Si
Transistor Polarity N-Channel
Transistor Type 1 N-Channel
Vds - Drain-Source Breakdown Voltage 40 V
Vgs th - Gate-Source Threshold Voltage 2.7 V
Width 9.25 mm
Вес, г 2.02