IRL1404ZS
650 руб.
от 2 шт. —
620 руб.
Добавить в корзину 1 шт.
на сумму 650 руб.
Номенклатурный номер: 8008422264
Страна происхождения: КИТАЙ
Бренд / Производитель: INFINEON TECHNOLOGIES AG.
Описание
MOSFET, N-CH, 40V, 120A, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0025ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V; Power Dissipation Pd:230W; Transistor Case Style:TO-263AB; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:HEXFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
Технические параметры
| Brand | Infineon/IR |
| Configuration | Single |
| Factory Pack Quantity | 3200 |
| Fall Time | 49 ns |
| Forward Transconductance - Min | 120 S |
| Height | 4.4 mm |
| Id - Continuous Drain Current | 200 A |
| Length | 10 mm |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +175 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TO-263-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 230 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 110 nC |
| Rds On - Drain-Source Resistance | 3.1 mOhms |
| Rise Time | 180 ns |
| RoHS | Details |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Vgs th - Gate-Source Threshold Voltage | 2.7 V |
| Width | 9.25 mm |
| Вес, г | 2.02 |
