FDMS86540
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Описание
FDMS86250/520/540 N-Channel PowerTrench® MOSFETs
ON Semiconductor FDMS86250/520/540 N-Channel PowerTrench® MOSFETs have been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low R DS(on), fast switching speed and body diode reverse recovery performance. Typical applications for these devices include DC-DC conversion, primary DC-DC switch, motor bridge switch, synchronous rectifier and load switch.
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ON Semiconductor FDMS86250/520/540 N-Channel PowerTrench® MOSFETs have been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low R DS(on), fast switching speed and body diode reverse recovery performance. Typical applications for these devices include DC-DC conversion, primary DC-DC switch, motor bridge switch, synchronous rectifier and load switch.
Learn More
Технические параметры
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 7.2 ns |
| Forward Transconductance - Min: | 73 S |
| Id - Continuous Drain Current: | 20 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | Power-56-8 |
| Pd - Power Dissipation: | 2.5 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 65 nC |
| Rds On - Drain-Source Resistance: | 3.4 mOhms |
| Rise Time: | 16 ns |
| Series: | FDMS86540 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | PowerTrench |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 32 ns |
| Typical Turn-On Delay Time: | 28 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
Техническая документация
Datasheet
pdf, 426 КБ
