FDP027N08B-F102

FDP027N08B-F102
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см. техническую документацию
990 руб.
от 50 шт.680 руб.
от 100 шт.538 руб.
от 500 шт.445.06 руб.
Добавить в корзину 1 шт. на сумму 990 руб.
Номенклатурный номер: 8008460131

Описание

Cloud Power Management Solutions

onsemi Cloud Power Management Solutions drive efficiency while simplifying system design, reducing board space, improving reliability and accelerating time to market. As the world demand for energy increases by 35 to 40% by 2030, onsemi powers major industrial products with cool efficiency to conserve the energy we use every day.

Технические параметры

Brand: onsemi/Fairchild
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: Factory Pack Quantity: 50
Id - Continuous Drain Current: 223 A
Manufacturer: onsemi
Maximum Operating Temperature: +175 C
Minimum Operating Temperature: -55 C
Mounting Style: Through Hole
Number of Channels: 1 Channel
Package / Case: TO-220-3
Packaging: Tube
Part # Aliases: FDP027N08B_F102
Pd - Power Dissipation: 246 W
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 178 nC
Rds On - Drain-Source Resistance: 2.21 mOhms
Series: FDP027N08B
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Vds - Drain-Source Breakdown Voltage: 80 V
Vgs - Gate-Source Voltage: -20 V, +20 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V

Техническая документация

Datasheet
pdf, 925 КБ