FDP150N10
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см. техническую документацию
см. техническую документацию
820 руб.
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570 руб.
от 100 шт. —
465 руб.
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Описание
Описание Н-Ч 100В 57А 110Вт 0,015Р ТО219
Технические параметры
| Channel Mode | Enhancement |
| Continuous Drain Current | 57(A) |
| Drain-Source On-Volt | 100(V) |
| Gate-Source Voltage (Max) | '±20(V) |
| Mounting | Through Hole |
| Number of Elements | 1 |
| Operating Temp Range | -55C to 150C |
| Operating Temperature Classification | Military |
| Package Type | TO-220 |
| Packaging | Rail/Tube |
| Pin Count | 3+Tab |
| Polarity | N |
| Power Dissipation | 110(W) |
| Rad Hardened | No |
| Type | Power MOSFET |
| Automotive | No |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Through Hole |
| Maximum Continuous Drain Current (A) | 57 |
| Maximum Drain Source Resistance (mOhm) | 15@10V |
| Maximum Drain Source Voltage (V) | 100 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 4.5 |
| Maximum IDSS (uA) | 1 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 110000 |
| Minimum Operating Temperature (°C) | -55 |
| Number of Elements per Chip | 1 |
| Part Status | Active |
| PCB changed | 3 |
| PPAP | No |
| Process Technology | TMOS |
| Product Category | Power MOSFET |
| Standard Package Name | TO |
| Supplier Package | TO-220 |
| Tab | Tab |
| Typical Fall Time (ns) | 83 |
| Typical Gate Charge @ 10V (nC) | 53 |
| Typical Gate Charge @ Vgs (nC) | 53@10V |
| Typical Input Capacitance @ Vds (pF) | 3580@25V |
| Typical Rise Time (ns) | 164 |
| Typical Turn-Off Delay Time (ns) | 86 |
| Typical Turn-On Delay Time (ns) | 47 |
